Name: /Tools-Info/10n80 Utc
Brand: EstiSource
Availability: InStock

10N80 UTC

Cost Estimation for this product is under upgradation. For any query or support please email us at 'info@estisource.com'.

10N80 UTC

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
Part Library

Bar Halfshaft
Tripot Housing
Cam Shaft
Chrome Ball
Connecting Rod
Crank Shaft
CVOR
Inlet Valve
Exhaust Valve
Piston
Spider Tripot
Universal Cross
Crank Pulley
Dowel Pin
Pulley Driven
Gudgeon Pin
Nut Retaining
Rack Bearing
Adaptor
Bushing
Guide
Tooth EA Tele
Spacer Ring
Pinion Gear
Transmission Case
Drive Shaft
Brake Caliper
Engine Mount Bracket
Steering Knuckle
Control Arm Assembly
Differential Case
Alternator
Radiator
Throttle Body
Fuel Injector
Axle Shaft
Ball Stud
Stub Axle
Ladder Cable Trays
Solar Strut Channel
Perforated Cable Trays
Bullet Fastener
Floor Trunking Ducts
Gi Full Threaded Rod
C-Channel
Piston Ring
Rotor Shaft
Wheel Cylinder
Board Connector
Signal Connector
Stator Insulator Cover
Stator Core Stack
Terminal Winding Connector
Rotor Stack
Motor housing
Motor Cover
Housing PCB
ECU Cover
Breathing Plug ECU cover
Tie rod
Lock Nut
Control Shaft
Soft Lock
Dust Cover
Dust Cap
Pinion Shaft
Rod end Housing
Steering Gear Housing
Torsion Bar
Rack Shaft
Closure Plug
Outboard Housing
Yoke Bearing, Rack
Ball Screw
Spindle
Precision Lock Nut
Disc Spring
Geometry Mandrills
Lubrication Unit
Level Bottle
Alignment Gauges
Spindle Clamping Gauge
Hydraulic Turret and Their Spares
Rotary Union for Coolant
Linear Blocks and Rails
Ring Gauge
Plug Gauge
MT Taper
Garbid Drill Bit
Chamfering Cutter
T-Slot Cutter
PCB Design
PCB Fabrication
FU6811L
SN74LS175
MT7855BD
FEDRI962L
GDTUBE2PIN 600 V
BGY588C
KF834T-24
KF887B0
ZMCT102W
W06 Bridge
VS-P405W
J2831
HIP4082IPZ
Green Trimmer
BPW34
DS1307
TYN612
L7805CV
WML10N80M3 WAYON
TCSC5200N CDIL
SKM100GB063D SEMIKRON
IRG4PH50K IR MEXICO TO247
IRG4PC40KPBF IR MEXICCO TO247
CM150DU12H MITSUBISHI
GT25Q101TOSHIBA TO47
GBU610 MDD
N79E715AT28 NUVOTON SMD
IRF610PBF VISHAY
KA2281 IC HLF
BY255LGE DIODE
KT400-26D IRON CORE
KS157-125A ALLOY CORE
KS106-125A KDM
MM74C926N IC HLF
ZMCT103C CURRENT TRANSFORMER
FUSE HOLDER
FGL60N100BNTDTU ON
MBRF20100DT OSEN
DK5V100R25C SMD
CD4543 IC HLF
BVH-M-R0005-5.0 ISABELLENHUETTE
ACS770LCB-050U ALIGRO
DC Pump Motor
DH3205A WXDH
10N80 UTC
7N65L-TC TO-220FI UTC
IRFB3306 IR
STP100N6F7 ST
KF834T-6V KEJIAN
SSS6N60A FSC PLASTIC TO220F
IRF7319TRPBF SMD INFINEON
IRFB7437PBF IR
IR2113IR 14PIN IC
IR2156IR 14PIN DIP
IR5C940AC-X4 940NM IR LED
IRF820PBF VISHAY
IRFB7537PBF IR
IRFBE20PBF VISHAY TO220
IRFP064NPBF IR CHINA TO247
IRFP4321PBF IR
IRFZ44NPBF IR TO220
IRS2092PBF IR 16PIN DIP IC
M57962L-01R MITSUBISHI
DSPIC30F2010-30 I-SP MICROCHIP 28PIN DIP
PIC18F252-I-SP MICROCHIP
PIC16F882-I-SP MICROCHIP 28PIN DIP
SN74HC153 HLF
74HC138N HG
U74HC32L DIP-14 UTC
BTA41-800B JSDG
SN74HC244 IC HLF
HER208 MDD
MBR20100WXDH
HFA30PA60CPBF VISHAY TO247
S40D60C MOSPEC TO3P
U30D60C MOSPEC TO3P
MUR3040 WXDH DIODE
MBR20200CT MOSPEC TO220
MUR1560G ON CHINA TO220
DPA422PN PI 8PIN DIP
LNK501PN PI 7PIN DIP
PI TOP244YN
TOP210P PI 8PIN DIP
TOP234YN PI TO220
TOP254EN PI TO263-6L
VIPPER12A ST CHINA 8PIN DIP
VIPPER27L ST 7PIN IC
MT7939 IC
MC145151P2MOTOROLA 28PIN
UM66T
DH066N06 WXDH
NJW0281 ISC CKT
IRFB7430PBF IR

One Click Product Costing

Choose File Upload Image/Print

Image must be less than 200KB.

Processing your request...

10N80 UTC N-Channel Power MOSFET

is an N-channel power MOSFET designed for high-voltage applications, rated at 800 V and typically packaged in a TO-220 casing. With low Rds(on), fast switching characteristics, and high energy handling capability, this MOSFET is widely used in power conversion systems, SMPS circuits, electronic ballasts, and motor control applications. Its rugged silicon construction ensures excellent avalanche ruggedness, making it ideal for applications demanding reliability under high-voltage stress.

How EstiSource Helps

EstiSource supports design and sourcing teams by streamlining the acquisition of critical components like the 10N80 UTC MOSFET. From real-time cost insights and alternate part recommendations to trusted supplier links and availability alerts, our platform ensures engineers and buyers reduce procurement time and cost, especially when dealing with high-voltage semiconductor components.

Why Choose EstiSource for 10N80 UTC Sourcing

Trusted network of UTC-authorized and verified suppliers Real-time price tracking for bulk orders and MOQ deals Expert support in finding package equivalents or drop-in replacements Logistics and lead time optimization for production schedules Engineering validation for alternate parts with comparable performance

1. Material Composition

▶

The 10N80 MOSFET consists of advanced silicon die fabricated using planar or trench gate technologies. Key materials include:

Semiconductor Substrate: Silicon wafer, doped for N-channel conductivity.
Gate Oxide: Thin layer of silicon dioxide.
Gate Material: Polysilicon with aluminum interconnects.
Encapsulation: Epoxy mold compound for mechanical and environmental protection.
Leads: Tin- or nickel-plated copper for solderability and conductivity.
Die Attach: Silver epoxy for thermal conduction.

2. Manufacturing Process

▶

Wafer Fabrication: Doping and lithography are used to form the N-channel MOSFET structure on a silicon wafer.
Gate Formation: Gate oxide is grown and polysilicon gate is deposited and patterned.
Source/Drain Implantation: Precision ion implantation and annealing create low-resistance paths.
Metallization: Aluminum or copper interconnects are applied to connect terminals.
Die Separation & Mounting: Individual dies are mounted onto TO-220 lead frames with thermally conductive adhesives.
Wire Bonding: Fine aluminum or gold wires connect the die to the leads.
Molding & Encapsulation: Epoxy molding protects the assembly.
Lead Trimming & Plating: External leads are shaped and plated for solder compatibility.
Testing & Marking: Electrical tests confirm threshold voltage, leakage, and breakdown voltage before final marking.

3. Challenges & Limitations

▶

Thermal Management

In compact designs, managing heat dissipation from an 800 V MOSFET can be challenging, requiring proper heat sinks and PCB design.

Gate Drive Requirements

High-voltage MOSFETs demand strong gate drive circuits to switch efficiently, especially at high frequencies.

Parasitic Capacitance

Larger die sizes can increase input and output capacitance, impacting switching speeds and EMI.

Avalanche Performance

Although robust, excessive inductive kickbacks may damage the device if not properly clamped.

Packaging Limitations

TO-220 packages are effective but may limit compactness or surface-mount applications.

4. Costing

▶

Single Unit (Retail): ₹45 – ₹70
Bulk Orders (100+ pcs): ₹28 – ₹40 per unit
SMD Packaging Variant (if applicable): Slightly higher cost due to handling precision
Custom Heatsink Attached Modules: ₹70 – ₹90 range

Cost can vary depending on packaging type (bulk tape, tray), supplier origin (China, Taiwan, India), and certifications (RoHS, AEC-Q).

5. Properties & Characteristics

▶

Drain-Source Voltage (Vds)

800 V

Continuous Drain Current (Id)

~10 A

Gate Threshold Voltage (Vgs(th))

2 – 4 V

On-Resistance (Rds(on))

Low (<1 Ω), improving efficiency

Rise/Fall Times

Fast switching (<100 ns typical)

Total Gate Charge (Qg)

Optimized for minimal drive losses

Mounting

TO-220 through-hole package, compatible with heat sinks

Temperature Range

–55 °C to +150 °C

Safe Operating Area (SOA)

Wide, with good avalanche energy handling

6. Frequently Asked Questions

▶

Q1: What are the key applications for 10N80 UTC MOSFET?

It's commonly used in SMPS, LED lighting drivers, high-voltage converters, and PFC circuits.

Q2: Can I use this in an H-bridge circuit for motor control?

Yes, provided the motor operates within the MOSFET's current and voltage specs.

Q3: What precautions should be taken for switching at high frequencies?

Ensure adequate gate driving strength, low parasitic inductance, and sufficient cooling.

Q4: How does this compare with IGBTs?

MOSFETs like 10N80 offer faster switching and better performance in low-to-medium power range compared to IGBTs.

Q5: Are there SMD equivalents of this part?

Yes, similar voltage-rated MOSFETs are available in SMD packages but may offer lower current handling.

Precision in every estimate, excellence in Service.